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| BCF 29, BFC 30 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 100/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IEB0 2 Kennwerte (Tj = 25/C) Typ. - - - 80 mV 150 mV Max. 100 nA 10 :A 100 nA 300 mV - - ICB0 - ICB0 - - - - - Collector saturation volt. - Kollektor-Sattigungsspg. ) - VCEsat - VCEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 18 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA BCF 29 BCF 30 BCF 29 BCF 30 - VBEsat - VBEsat hFE hFE hFE hFE VBEon fT CCB0 - - - - 120 215 600 mV 100 MHz - BCF 29, BCF 30 Kennwerte (Tj = 25/C) Typ. 720 mV 810 mV 90 150 - - - - 4.5 pF Max. - - - - 260 500 750 mV - - DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 2 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCF 29 = C7 F - RthA 1 dB 4 dB 420 K/W 2) BCF 32, BCF 33 BCF 30 = C8 Collector-Base Capacitance - Kollektor-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 19 |
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